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PDF MBRF120100R Data sheet ( Hoja de datos )
| Número de pieza | MBRF120100R | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive
MBRF12045 thru MBRF120100R
VRRM = 45 V - 100 V
IF(AV) = 120 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF12045(R) MBRF12060(R) MBRF12080(R) MBRF120100(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF12045(R) MBRF12060(R) MBRF12080(R) MBRF120100(R) Unit
Average forward current
(per pkg)
IF(AV)
TC = 125 °C
120
120
120
120 A
Peak forward surge current
(per leg)
IFSM tp = 8.3 ms, half sine
800
800
800
800 A
Maximum forward voltage
(per leg)
VF IFM = 60 A, Tj = 25 °C
0.70
0.75
0.84
0.84 V
Reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
1
10
1
10
1
10
1
10 mA
Tj = 150 °C
30
30
30
30
Thermal characteristics
Thermal resistance, junction-
case (per leg)
RΘJC
0.80 0.80 0.80 0.80 °C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBRF120100R.PDF ] | |
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| MBRF120100R | (MBRF12045 - MBRF120100R) Silicon Power Schottky Diode | America Semiconductor |
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