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PDF PMCM6501VPE Data sheet ( Hoja de datos )
| Número de pieza | PMCM6501VPE | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMCM6501VPE
12 V, P-channel Trench MOSFET
10 August 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Ultra small package: 0.98 × 1.48 × 0.35 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Battery switch
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -12 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -8.2 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.0 A; Tj = 25 °C
resistance
- 19 25 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[3] -
45 55 K/W
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 4-layer 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-013880
Zth(j-a)
(K/W) duty cycle = 1
0.75
102 0.50
0.33 0.25
0.20
0.10
0.05
10
0 0.02
0.01
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102 duty cycle = 1
aaa-013881
Zth(j-a)
(K/W)
0.75
0.50
0.33 0.25
0.20
0.10
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering
0.5
PMCM6501VPE
12 V, P-channel Trench MOSFET
0.15
0.35
PMCM6501VPE
0 .25
0.25 1.2
solder resist
solder paste = solderland
occupied area
Dimensions in mm
0.5
1.7
Fig. 20. Reflow soldering footprint for WLCSP6 (OL-PMCM6501VPE)
pmcm6501vpe-ssmos_fr
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 15
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