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PDF PMCM4401VNE Data sheet ( Hoja de datos )
| Número de pieza | PMCM4401VNE | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMCM4401VNE
12V, N-channel Trench MOSFET
24 July 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Ultra small package: 0.78 × 0.78 × 0.35 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 12 V
-8 -
8V
[1] - - 6 A
- 36 42 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMCM4401VNE
12V, N-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 5 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-013734
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33 0.25
0.20
0.10
0.05
10 0
0.02
0.01
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102 duty cycle = 1
0.75
0.50
Zth(j-a)
(K/W)
0.33 0.25
0.20 0.10
aaa-013735
10 0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM4401VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering
0.15
0.25
PMCM4401VNE
12V, N-channel Trench MOSFET
PMCM4401VNE
0.3
0.4 0.1 1
solder resist
solder paste = solderland
occupied area
Dimensions in mm
0.4
1
Fig. 20. Reflow soldering footprint for WLCSP4 (OL-PMCM4401VNE)
pmcm4401vne-ssmos_fr
PMCM4401VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMCM4401VNE.PDF ] | |
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