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Número de pieza PESD18VF1BL
Descripción Ultra low capacitance bidirectional ESD protection diode
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 1— 2 September 2013
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
Ultra low diode capacitance Cd = 0.35 pF
High reverse standoff voltage VRWM = 18 V
Very small voltage dependency of the capacitance
ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
3. Applications
NFC antenna protection
Protection of high-speed data lines
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
Conditions
diode capacitance f = 1 MHz; VR = 0 V
reverse standoff
voltage
Min Typ Max Unit
0.28 0.35 0.5 pF
- - 18 V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1 cathode (diode 1)
K2 cathode (diode 2)
Simplified outline
Graphic symbol
12
Transparent
top view
DFN1006-2 (SOD882)
12
sym045

1 page




PESD18VF1BL pdf
NXP Semiconductors
PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
0.4
Cd
(pF)
0.35
aaa-008157
IPPM
IPP
0.30
0.25
0.20
-20 -10 0 10 20
VR (V)
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
25
I
(A)
20
-VCL -VBR -VRWM
IR
IRM
-IRM
-IR
VRWM VBR VCL
-+
-IPP
-IPPM
006aab325
Fig 7. V-I characteristics for a bidirectional ESD
protection diode
aaa-009078
15
10
5
0
0 10 20 30 40
VCL (V)
tp = 100 ns; Transmission Line Pulse (TLP)
Fig 8. Dynamic resistance
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
5 of 11

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PESD18VF1BL arduino
NXP Semiconductors
PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
16. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . .1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
4 Quick reference data . . . . . . . . . . . . . . . . . . . . . .1
5 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1
6 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
7 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
9 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .3
10 Application information. . . . . . . . . . . . . . . . . . . .6
11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
14.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
14.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
15 Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 September 2013
Document identifier: PESD18VF1BL

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