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PDF NX7002BKXB Data sheet ( Hoja de datos )
| Número de pieza | NX7002BKXB | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX7002BKXB
60 V, dual N-channel Trench MOSFET
30 June 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tsp = 25 °C
- - 330 mA
VGS = 10 V; Tamb = 25 °C
[1] - - 260 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 1 cm2.
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NX7002BKXB
60 V, dual N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
[2] -
-
276 307 K/W
381 438 K/W
27 31 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103 aaa-015677
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102 0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BKXB
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 17
5 Page 
NXP Semiconductors
11. Test information
Fig. 18. Duty cycle definition
NX7002BKXB
60 V, dual N-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
NX7002BKXB
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 17
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