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PDF NX5P2190 Data sheet ( Hoja de datos )
| Número de pieza | NX5P2190 | |
| Descripción | Logic controlled high-side power switch | |
| Fabricantes | NXP Semiconductors | |
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NX5P2190
Logic controlled high-side power switch
Rev. 1.1 — 15 January 2015
Product data sheet
1. General description
The NX5P2190 is an advanced power switch with adjustable current limit. It includes
under-voltage and over-voltage lockout, over-current, over-temperature, reverse bias and
in-rush current protection circuits. These circuits are designed to isolate a voltage source
from a VBUS interface pin automatically when a fault occurs. The device features two
power switch terminals, one input (VINT) and one output (VBUS). A current limit input
(ILIM) defines the over-current and in-rush current limit, and a voltage detect output
(VDET) monitors the voltage level on VBUS. An open-drain fault output (FAULT) indicates
when a fault condition occurs. An enable input (EN) controls the state of the switch. When
EN is set LOW the device enters a low-power mode, disabling all protection circuits
except the under-voltage lockout. The low-power mode can be entered at anytime unless
the over temperature protection circuit has been triggered.
Designed for operation from 3 V to 5.5 V, the NX5P2190 is a complete solution for power
domain isolation and protection applications. The enable input includes integrated logic
level translation making the device compatible with lower voltage processors and
controllers.
2. Features and benefits
Wide supply voltage range from 3 V to 5.5 V
30 V tolerant on VBUS
ISW maximum 2 A continuous current
Very low ON resistance: 100 m (maximum) at a supply voltage of 4.0 V
Low-power mode (ground current 20 A typical)
1.8 V control logic
Soft start turn-on slew rate
Protection circuitry
Over-temperature protection
Over-current protection with low current output mode
Reverse bias current/Back drive protection
Over-voltage lockout
Under-voltage lockout
Analog voltage limited VBUS monitor path
ESD protection:
HBM JDS-001 Class 2 exceeds 2 kV
IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS
Specified from 40 C to +85 C
1 page  
NXP Semiconductors
NX5P2190
Logic controlled high-side power switch
8.1 EN input
If EN is set LOW, the N-channel MOSFET is disabled, the FAULT output is set
HIGH-impedance and the device enters low-power mode. In low-power mode, all
protection circuits are disabled except the under-voltage lockout circuit. If EN is set HIGH,
all protection circuits are reactivated. If no fault conditions exist and an RILIM current limit
resistor is detected, the N-channel MOSFET is enabled.
8.2 Under-voltage lockout (UVLO)
The UVLO circuit is active until VINT > 3.2 V. It disables the N-channel MOSFET, sets the
FAULT output LOW and returns the device to low-power mode. The EN pin does not affect
the UVLO circuit. Once VINT > 3.2 V, the EN pin controls the N-channel MOSFET state.
The UVLO circuit remains active in low-power mode.
8.3 Over-voltage lockout (OVLO)
If EN is set HIGH and VINT > 5.9 V, the OVLO circuit is active. It disables the N-channel
MOSFET and sets the FAULT output LOW. In low-power mode, the OVLO circuit is
disabled and does not change the FAULT output state. If the OVLO circuit is active, setting
the EN pin LOW returns the device to low-power mode.
8.4 ILIM
The over-current protection circuit's (OCP) trigger value Iocp, is set using an external
resistor connected to the ILIM pin (see Figure 6). If EN is set HIGH and the ILIM pin is
grounded, the device is in over-current. The N-channel MOSFET is disabled, the FAULT
output is set LOW and VBUS supplied by the 10 mA current source.
8.5 Over-current protection (OCP)
When the current through the N-channel MOSFET exceeds Iocp for 20 s or VBUS < VINT
200 mV, the device is in over-current. The OCP circuit disables the N-channel MOSFET
within 2 s, sets the FAULT output LOW and supplies VBUS from the 10 mA current
source. The OCP circuit is automatically reset when VINT > VBUS > VINT 200 mV for
20 s. The N-channel MOSFET assumes the state defined by EN, the 10 mA current
source is disconnected and the FAULT output is set HIGH-impedance. If the OCP circuit is
active, setting the EN pin LOW returns the device to low-power mode.
8.6 Over-temperature protection (OTP)
If EN is set HIGH and the device temperature exceeds 125 °C, the device is in over
temperature. The OTP circuit disables the N-channel MOSFET and sets the FAULT
output LOW. Transitions on the EN pin have no effect. Once its temperature decreases to
below 115 °C the device returns to the defined state. The OTP circuit is disabled in
low-power mode.
NX5P2190
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
NX5P2190
Logic controlled high-side power switch
,6 2))
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DDD
9, 9%86 9
7DPE &
(1) Tamb = 85 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 10. Typical OFF-state leakage current versus input
voltage on pin VBUS
(1) VI(VBUS) = 5.0 V
(2) VI(VBUS) = 10.0 V
(3) VI(VBUS) = 15.0 V
Fig 11. Typical OFF-state leakage current versus
temperature
13.2 ON resistance
Table 10. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions
Tamb = 25 C Tamb = 40 C to +85 C Unit
Min Typ Max Min
Max
RON ON resistance switch enabled; ILOAD = 200 mA;
see Figure 12, Figure 13 and Figure 14
VI(VINT) = 4.0 V to 5.5 V
- 60 -
-
100 m
13.3 ON resistance test circuit and waveforms
96:
9
,/2$'
(1
9%86
RON = VSW / ILOAD.
Fig 12. Test circuit for measuring ON resistance
9,17
*1'
9,
DDD
NX5P2190
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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