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PDF SQD50P08-28 Data sheet ( Hoja de datos )
| Número de pieza | SQD50P08-28 | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQD50P08-28
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
ID (A)
Configuration
TO-252
- 80
0.028
- 48
Single
S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
G
GDS
Top View
Drain Connected to Tab
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50P08-28-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 80
± 20
- 48
- 28
- 50
- 190
- 45
100
136
45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
Limited by RDS(on)*
10
1
100 μs
1 ms
10 ms
100 ms
1 s, 10 s, DC
0.1 TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
SQD50P08-28
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01 0.1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQD50P08-28.PDF ] | |
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