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PDF SQ4470EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4470EY | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ4470EY
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 6 V
ID (A)
Configuration
SO-8
60
0.012
0.014
16
Single
D
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S1
S2
S3
G4
Top View
8D
7D
6D
5D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4470EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
16
9
6
67
50
125
7.1
2.3
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
80
21
UNIT
°C/W
S12-1845-Rev. C, 30-Jul-12
1
Document Number: 65673
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
1
Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100 μs
1 ms
10 ms
100 ms
1s
10 s, DC
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ4470EY
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
S12-1845-Rev. C, 30-Jul-12
5
Document Number: 65673
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
Return to Index
Return to Index
0.022
(0.559)
0.050
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SQ4470EY.PDF ] | |
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