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PDF SI3483DV Data sheet ( Hoja de datos )
| Número de pieza | SI3483DV | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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P-Channel 30-V (D-S) MOSFET
Si3483DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.035 @ VGS = −10 V
−30
0.053 @ VGS = −4.5 V
ID (A)
−6.2
−5.0
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3483DV-T1—E3 (Lead Free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
−6.2
−4.7
−4.9
−3.7
−25
−1.7
−0.95
2.0 1.14
1.3 0.73
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72078
S-40238—Rev. B, 16-Feb-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
Si3483DV
Vishay Siliconix
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72078
S-40238—Rev. B, 16-Feb-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI3483DV.PDF ] | |
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