|
|
PDF PTFC270101M Data sheet ( Hoja de datos )
| Número de pieza | PTFC270101M | |
| Descripción | High Power RF LDMOS Field Effect Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTFC270101M (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
|
No Preview Available !
PTFC270101M
High Power RF LDMOS Field Effect Transistor
10 W, 28 V, 900 – 2700 MHz
Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
PTFC270101M
Package PG-SON-10
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
23 70
22
Gain
21
60
50
20 40
19 30
18 20
Efficiency
17 10
16
c270101m-2.1-gr1c
0
24 26 28 30 32 34 36 38 40
Output Power (dBm)
Features
• Unmatched input and output
• Typical CW performance, 2170 MHz, 28 V
- Output power @ P1dB = 10 W
- Gain = 20 dB
- Efficiency = 60%
• Typical two-carrier WCDMA performance, 2170
MHz, 28 V, 8 dB PAR
- Output power = 1.3 W avg
- Gain = 21 dB
- Efficiency = 21%
- ACPR = –44.9 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @ 28 V, 10 W
(CW) output power
• Integrated ESD protection
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 120 mA, POUT = 2.4 W avg, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min
Gain
Gps 19.5
Typ
20.5
Max
—
Unit
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 22
Rev. 04.1, 2016-07-26
1 page  
PTFC270101M
Typical RF Performance, 2110 – 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
IMD Low
-15 IMD Up
65
55
ACPR
-25 Efficiency
45
-35 35
-45 25
-55 15
-65
c270101m-2.1-gr2c
5
24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 2110 MHz
24
22 Gain
66
54
20 42
18 30
Efficiency
16
VDD = 24 V
18
VDD = 28 V
VDD = 32 V
14
c270101m-2.1-gr5a
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 2140 MHz
24
Gain
22
66
54
20 42
18 30
Efficiency
16
VDD = 24 V
VDD = 28 V
VDD = 32 V
18
14
c270101m-2.1-gr5b
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 2170 MHz
24
66
22 Gain
20
54
42
18 30
Efficiency
16
VDD = 24 V
VDD = 28 V
VDD = 32 V
18
14
c270101m-2.1-gr5c
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Data Sheet
5 of 22
Rev. 04.1, 2016-07-26
5 Page 
PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
920 IMDL
920 IMDU
940 IMDL
-25 940 IMDU
960 IMDL
960 IMDU
-35
-45
c270101m-900-gr3
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 120 mA
26 78
24 Gain
22
960 MHz
20 940 MHz
920 MHz
18
66
54
42
30
16
14
24
Efficiency
28 32 36 40
Output Power (dBm)
18
c270101m-900-gr4
6
44
Small Signal CW Performance
Gain & Input Return Loss
VDD = 28 V, IDQ = 120 mA
24
0
Gain
-5
22 -10
-15
20 -20
18
750
850
Input Return Loss
-25
950
1050
c270101m-900-gr6_v2
-30
1150
Frequency (MHz)
CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 920 MHz
26
24 Gain
78
66
22 VDD = 24 V
VDD = 28 V
20 VDD = 32 V
54
42
18 30
16
Efficiency
18
14
24
28
32
36
40
c270101m-900-gr5a
6
44
Output Power (dBm)
Data Sheet
11 of 22
Rev. 04.1, 2016-07-26
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet PTFC270101M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTFC270101M | High Power RF LDMOS Field Effect Transistor | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |