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PDF BUK7909-75ATE Data sheet ( Hoja de datos )
| Número de pieza | BUK7909-75ATE | |
| Descripción | N-channel TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7909-75ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS drain-source voltage
Static characteristics
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7;
see Figure 8
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj ≥ -55 °C;
Tj ≤ 175 °C
VF(TSD)
temperature sense
diode forward
voltage
IF = 250 µA; Tj = 25 °C
Min Typ Max Unit
- - 75 V
- 8 9 mΩ
-1.4 -1.54 -1.68 mV/K
648 658 668 mV
1 page  
NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from vertical in still air
junction to ambient
thermal resistance from see Figure 4
junction to mounting
base
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
Min Typ Max Unit
- 60 - K/W
- - 0.55 K/W
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
10-2
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ni64
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7909-75ATE_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
100
03ni85
IS
(A)
75
50
25
0
0.0
175 °C
Tj = 25 °C
0.4 0.8 1.2 1.6
VSD (V)
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values
BUK7909-75ATE_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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