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PDF BUK7909-75AIE Data sheet ( Hoja de datos )
| Número de pieza | BUK7909-75AIE | |
| Descripción | N-channel TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 75 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 120 A
see Figure 2; see Figure 3
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7;
see Figure 8
- 8 9 mΩ
ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C;
to sense current
VGS > 10 V
450 500 550
[1] Current is limited by power dissipation chip rating.
1 page  
NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from vertical in still air
junction to ambient
thermal resistance from see Figure 4
junction to mounting base
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Min Typ Max Unit
- 60 - K/W
- - 0.55 K/W
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
10-2
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ni64
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
BUK7909-75AIE_2
Modifications:
20090217
Product data sheet
-
BUK71_7909_75AIE-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7909-75AIE separated from data sheet BUK71_7909_75AIE-01.
BUK71_7909_75AIE-01 20020809
(9397 750 09879)
Product data sheet
-
-
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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