PDF PTFB090901FA Data sheet ( Hoja de datos )

Número de pieza	PTFB090901FA
Descripción	Thermally-Enhanced High Power RF LDMOS FET
Fabricantes	Infineon
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Hay una vista previa y un enlace de descarga de PTFB090901FA (archivo pdf) en la parte inferior de esta página. Total 14 Páginas
No Preview Available ! Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power ampliﬁer applications in the 920 to 960 MHz frequency band. Features in- clude input and output matching, high gain and thermally-enhanced packages. Manufactured with Inﬁneon's advanced LDMOS pro- cess, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20 Efficiency 18 10 17 b090901 gr 1 0 31 33 35 37 39 41 43 45 47 49 Output Power, Avg. (dBm) Features • Input and output internal matching • Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efﬁciency = 65% • Typical two-carrier WCDMA performance, 960 MHz, 28 V - Average output power = 20 W - Linear Gain = 20.8 dB - Efﬁciency = 35% - Intermodulation distortion = –35 dBc • Integrated ESD protection • Low thermal resistance • Pb-free and RoHS-compliant • Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power RF Characteristics Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon test ﬁxture) VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz 3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz Characteristic Symbol Min Gain Drain Efficiency Adjacent Channel Power Ratio Gps ηD ACPR 19 36 — All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Typ Max Unit 19.5 — dB 40 — % –35 –31.5 dBc Rev. 04, 2012-02-23 1 page Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up at selected frequencies VDD = 28 V, IDQ = 650 mA, 1 MHz tone spacing -20 -30 -40 -50 -60 33 960 MHz 940 MHz 920 MHz 36 39 42 45 48 Output Power, PEP (dBm) b090901 gr 10 51 CW Drive-up (over temperature) VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz 23 70 22 Gain 21 60 50 20 40 19 30 18 +25ºC 20 17 Efficiency +85°C –30ºC 10 16 b090901 gr 12 0 34 36 38 40 42 44 46 48 50 Output Power, Avg. (dBm) PTFB090901EA PTFB090901FA Two-tone Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 650 mA, ƒ1 = 960 MHz, ƒ2 = 959 MHz -20 3rd Order -30 5th -40 7th -50 -60 -70 33 b090901 gr 11 36 39 42 45 48 51 Output Power, PEP (dBm) CW Drive-up VDD = 28 V, ƒ = 960 MHz 23 22 IDQ = 980 mA 21 IDQ = 650 mA 20 19 IDQ = 330 mA 18 34 36 38 40 42 44 46 Output Power, Avg. (dBm) b090901 gr 13 48 50 Data Sheet 5 of 14 Rev. 04, 2012-02-23 5 Page Confidential, Limited Internal Distribution Reference Circuit (cont.) Component ID Input (cont.) S1 S2 S3 Output C201 C202, C207, C215, C216 C203 C204 C205, C209 C206, C208 C210, C211 C212 C213 C214 Description Transistor Potentiometer, 2k Ω Voltage Regulator Chip capacitor, 1 pF Chip capacitor, 1.0 µF Chip capacitor, 100000 pF Chip capacitor, 1000000 pF Capacitor, 10 µF Chip capacitor, 33 pF Chip capacitor, 3 pF Chip capacitor, 1000000 pF Chip capacitor, 100000 pF Chip capacitor, 33 pF Suggested Supplier Digi-Key Digi-Key Digi-Key ATC ATC Digi-Key Digi-Key Digi-Key ATC ATC Digi-Key Digi-Key ATC See next page for package outline PTFB090901EA PTFB090901FA P/N BCP5616TA-ND 3224W-202ECT-ND LM78L05ACM-ND 100B0R9BW500XB 281M5002106K PCC104BCT-ND 478-3993-2-ND 587-1818-2-ND 100B330JW500XB 100B2R5BW500XB 478-3993-2-ND PCC104BCT-ND 100B330FW500XB Data Sheet 11 of 14 Rev. 04, 2012-02-23 11 Page

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