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PDF PTFB093608SV Data sheet ( Hoja de datos )
| Número de pieza | PTFB093608SV | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 920 to 960
MHz frequency band. Features include input and output matching,
high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB093608SV
Package H-37275G-6/2
Two-carrier WCDMA 3GPP Drive Up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
21.0
60
20.5
50
20.0
Gain
19.5
40
30
19.0
20
18.5
18.0
35
Efficiency
40 45 50
Output Power Avg. (dBm)
10
0
55
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
and Doherty applications
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
960 MHz, 28 V, device leads in gullwing
configuration
- Average output power = 160 W
- Gain = 19 dB
- Efficiency = 40%
• Integrated ESD protection
• Low thermal resistance
• Capable of handling 10:1 VSWR @ 32 V, 960 MHz,
+3 dB Input Overdrive = 500 W (CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.8 A, POUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
18 20 — dB
hD
33.5
34
—
%
Adjacent Channel Power Ratio
ACPR
— –36 –31.5 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 05, 2015-01-22
1 page  
PTFB093608SV
Alternative Peak-tune Load Pull Characteristics
Power Sweep, under Pulsed Conditions
VDD=28 VDC, IDQ= 1400 mA, Pulsed CW, 12 µsec,
10% Duty Cycle, single side measurement
55
53
51
49
47
960 MHz
45 940 MHz
920 MHz
43
24 26 28 30 32 34 36 38
Input Power (dBm)
Frequency
MHz
920
940
960
dBm
53.95
53.80
53.58
P1dB
W
248
240
228
Impedance at P1dB
Frequency
Z Source W
Z Load W
MHz
R
jX R jX
920
3.76
2.08
1.35
2.42
940
4.99
2.64
1.27
2.48
960
4.72
2.70
1.22
2.42
Note: Load pull test fixture tuned for peak P1dB output power at 28 V.
Measurement on single side.
Data Sheet
5 of 13
Rev. 05, 2015-01-22
5 Page 
PTFB093608SV
Reference Circuit (cont.)
Components Information
Component
Description
Input
C101
Chip capacitor, 1.8 pF
C102, C103
Chip capacitor, 2.7 pF
C104, C105, C109, C113 Chip capacitor, 56 pF
C106, C110
Chip capacitor, 3.9 pF
C107, C111
Chip capacitor, 2.7 pF
C108, C112, C804
Chip capacitor, 10000 pF
C114
Chip capacitor, 4.71 μF
C801, C802, C803
Chip capacitor, 1000 pF
R101
R102, R107
R103, R104, R105, R106,
R801
Resistor, 22 W
Resistor, 10 W
Resistor, 0 W
R802
R803
R804
R805
S1
S2
Resistor, 2000 W
Resistor, 1000 W
Resistor, 1300 W
Resistor, 1200 W
Potentiometer, 2k W
Transistor
S3 Voltage Regulator
Output
C201, C202, C204
C203, C220, C221
C205, C206
C207, C208
C209, C222
C210, C211, C216, C217
C212, C215
C213, C214, C218, C219
Chip capacitor, 1.7 pF
Chip capacitor, 2.2 pF
Chip capacitor, 56 pF
Chip capacitor, 3.3 pF
Chip capacitor, 4.7 pF
Chip capacitor, 4.71 μF
Capacitor, 100 μF
Capacitor, 10 μF
Pinout Diagram (top view)
Suggested Manufacturer P/N
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC100B1R8BW500XB
ATC100B2R7BW500XB
ATC100B560JW500XB
ATC100B3R9CW500XB
ATC100B2R7CW500XB
ATC200B103MW
493-2372-2-ND
PCC1772CT-ND
P22ECT-ND
P10ECT-ND
P0ECT-ND
P2.0KECT-ND
P1.0KECT-ND
P1.3KGCT-ND
P1.2KGCT-ND
3224W-202ECT-ND
BCP56-ND
LM78L05ACM-ND
ATC
ATC
ATC
ATC
ATC
ATC
Digi-Key
Digi-Key
ATC100B1R7BW500XB
ATC100B2R2BW500XB
ATC100B560JW500XB
ATC100B3R3BW500XB
ATC100B4R7BW500XB
490-1864-2-ND
PCE4442TR-ND
587-1818-2-ND
V1
Data Sheet
D1
G1
V2
D2
SS = flange
G2
H-34275G-6-2_pd_10-10-2012
11 of 13
Pin
V1
V2
D1
D2
G1
G2
S
Description
VDD device 1
VDD device 2
Drain device 1
Drain device 2
Gate device 1
Gate device 2
Source (flange)
Rev. 05, 2015-01-22
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PTFB093608SV.PDF ] | |
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