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PDF PTFA261702E Data sheet ( Hoja de datos )
| Número de pieza | PTFA261702E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PTFA261702E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 2500 – 2700 MHz
Description
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX
power amplifier applications in the 2500 to 2700 MHz band. Features
include input and output matching, and thermally-enhanced package
with slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
WiMAX Performance
VDD = 28 V, IDQ = 1800 mA,
(modulation = 64 QAM2/3, channel bandwidth = 3.5
MHz, sample rate = 4 MHz)
30 -15
Efficiency
25 EVM: ƒ = 2.62 GHz
20 EVM: ƒ = 2.68 GHz
EVM: ƒ = 2.65 GHz
15
-20
-25
-30
10 -35
5 -40
0
20
25 30 35 40 45
Output Power (dBm)
-45
50
PTFA261702E
Package H-30275-4
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical WiMAX performance at 2650 MHz, 28 V
- Average output power = 32 W
- Linear gain = 15 dB
- Efficiency = 20%
- Error vector magnitude = –29 dB
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1800 mA, POUT = 32 W average
ƒ = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol Min Typ
Gps — 15
ηD — 20
EVM
— –29
Max
—
—
—
Unit
dB
%
dB
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01.1, 2009-02-20
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz
18
17 TCASE = 25°C
TCASE = 90°C
16
15 Gain
14
13
12 Efficiency
11
10
10 50 90 130 170
Output Power (W)
60
50
40
30
20
10
210
Broadband Circuit Impedance
Z Source
G
G
Z Load
D
S
D
PTFA261702E
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.37 A
1.11 A
1.85 A
2.78 A
5.56 A
8.34 A
0 20 40 60 80
Case Temperature (°C)
100
Z0 = 50 Ω
Z Source
2700 MHz
2600 MHz
Frequency
MHz
2600
2620
2640
2660
2680
2700
Z Source Ω
R jX
8.9 –1.2
9.1 –1.2
9.2 –1.1
9.3 –0.9
9.4 –0.8
9.5 –0.6
Data Sheet
Z Load Ω
R jX
7.0 –11.9
6.6 –11.5
6.2 –11.2
5.9 –10.9
5.7 –10.5
5.4 –10.2
Z Load
2700 MHz
0.2
2600 MHz
5 of 10
Rev. 01.1, 2009-02-20
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA261702E.PDF ] | |
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