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PDF PTFA261301E Data sheet ( Hoja de datos )
| Número de pieza | PTFA261301E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFA261301E
PTFA261301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 2.62 – 2.68 GHz
Description
The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt,
internally-matched GOLDMOS ® FETs intended for ultra-linear
applications. They are characterized for CDMA, CDMA2000, Super3G
(3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full
gold metallization ensures excellent device lifetime and reliability.
PTFA261301E
Package H-30260-2
3-Carrier CDMA2000 Performance
at 28 Volts
IDQ = 1.4 A, ƒ = 2680 MHz
-10 30
Efficiency
-20 25
-30 20
-40 Alt2 15
Alt
-50 10
-60 ACPR 5
-70
0
0
5 10 15 20 25 30 35
Output Power, avg. (W)
PTFA261301F
Package H-31260-2
Features
• Thermally-enhanced, Pb-free packages,
RoHS-compliant
• Broadband internal matching
• Typical CDMA performance at 2.68 GHz
- Average output power = 26 W
- Linear Gain = 13 dB
- Efficiency = 24%
• Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 152 W
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130
W (CW) output power
RF Performance
CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.4 A, POUT = 26 W average, ƒ = 2680 MHz
Characteristic
Symbol Min Typ Max Unit
Adjacent Channel Power Ratio
ACPR
— –45
—
dBc
Gain
Drain Efficiency
Gps — 13 — dB
ηD
— 24
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 07, 2007-04-04
1 page  
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 1.4 A, ƒ = 2680 MHz
16
15
14
13
12
11
10
35
Gain
Efficiency
40 45 50
Output Power (dBm)
60
50
40
30
20
10
0
55
PTFA261301E
PTFA261301F
Gain & Efficiency vs. Output Power
VDD = 32 V, IDQ = 1.4 A, ƒ = 2680 MHz
16
15
14
13
12
11
10
35
Gain
Efficiency
40 45 50
Output Power (dBm)
60
50
40
30
20
10
0
55
2-Tone Performance
Gain, Efficiency & RL vs. Frequency
VDD = 28 V, IDQ = 1.4 A, POUT = 65 W
40
Efficiency
35
-5
30 -10
RL
25
20
Gain
15
-15
10
2580
2600
2620 2640 2660
Frequency (MHz)
2680
-20
2700
3-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 1.4 A, ƒ = 2680 MHz
60 -40
50 ACP, 25°C ALT, 25°C
-45
40
ALT, 90°C
-50
30
ACP, 90°C
20
10
0
35 38
-55
Efficiency, -60
25°C
-65
Efficiency, 90°C
-70
41 44 47 50
Output Power, Avg. (dBm)
Data Sheet
5 of 12
Rev. 07, 2007-04-04
5 Page 
Package Outline Specifications
Package H-31260-2
45° X 2.031
[.080]
2X 12.70
[.500]
D
PTFA261301E
PTFA261301F
2x 4.83±0.50
[.190±.020]
13.72
[.540]
LID
13.21
+0.10
–0.15
[.520
+.004
–.006
]
.
23.37±0.51
[.920±.020]
G
LID 22.35±0.23
[.880±.009]
4X R 0.51
[R.020] MAX
4.11±0.38
[.162±.015]
1.02
[.040]
S
FLANGE 23.11
[.910]
SPH 1.57
[.062]
0.0381 [.0015] -A-
260-cases_31260
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
11 of 12
Rev. 07, 2007-04-04
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PTFA261301E.PDF ] | |
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