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PDF PTFA260851F Data sheet ( Hoja de datos )
| Número de pieza | PTFA260851F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
85 W, 2500 – 2700 MHz
PTFA260851E
PTFA260851F
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs
designed for WiMAX power amplifier applications in the 2500 to
2700 MHz band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA260851E
Package H-30248-2
PTFA260851F
Package H-31248-2
WiMAX
EVM and Efficiency vs. Output Power
VDS = 28 V, IDQ = 900 mA
25 -20
2.62
20
GHz
2.68
-25
GHz
Efficiency
15 2.62
-30
10 -35
EVM
5 -40
0 -45
15 20 25 30 35 40 45
Output Power (dBm)
Features
• Thermally-enhanced, Pb-free and RoHS-compli-
ant packages
• Broadband internal matching
• Typical WiMAX performance at 2680 MHz, 28 V
- Average output power = 16 W
- Linear Gain = 14 dB
- Efficiency = 22%
- Error Vector Magnitude = –29 dB
• Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 100 W
- Efficiency = 47%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
85 W (CW) output power
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol Min Typ
Gps — 14
ηD
EVM
— 22
— –29
Max
—
—
—
Unit
dB
%
dB
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02.1, 2009-02-20
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
WCDMA 3GPP Single-carrier Performance
IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
-30
-35
-40
-45 32 V
28 V
-50
26 V
-55
25
30
35 40 45
Output Power (dBm)
50
PTFA260851E
PTFA260851F
WCDMA 3GPP 2-carrier Performance,
various voltages
IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB,
10 MHz spacing
-30
ACPR
-35 IMD 3
-40 32 V
-45
-50
-55
25
26 V
28 V
30 35 40
Output Power (dBm)
45
WCDMA 3GPP 2-carrier Performance
VDD = 28 V & 32 V, IDQ = 900 mA, ƒ = 2.68 GHz,
PAR = 8 dB, 10 MHz spacing
40
VDD = 28 V
30 VDD = 32 V
Gain
20
16
15
14
10
Efficiency
0
25 30 35 40
Output Power (dBm)
13
12
45
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.19 A
0.56 A
0.93 A
1.39 A
2.78 A
4.17 A
5.56 A
6.95 A
8.34 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 02.1, 2009-02-20
5 Page 
PTFA260851E/F
Confidential, Limited Internal Distribution
Revision History:
2009-02-20
Previous Version:
2006-07-21, Preliminary Data Sheet
Page
Subjects (major changes since last revision)
6, 7 Add impedance and circuit information.
1 Increase bandwidth from 2620 – 2680 to 2500 – 2700.
8 Fixed typing error
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS ® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
InfineonTechnologies AG
81726 München, Germany
© InfineonTechnologies AG 2009.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 02.1, 2009-02-20
11 Page | ||
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| PDF Descargar | [ Datasheet PTFA260851F.PDF ] | |
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