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PDF PTFA240451E Data sheet ( Hoja de datos )
| Número de pieza | PTFA240451E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFA240451E
Thermally-Enhanced High Power RF LDMOS FET
45 W, 2420 – 2480 MHz
Description
The PTFA240451E is a thermally-enhanced, 45-watt, internally-
matched GOLDMOS® FET intended for CDMA2000 and WiMAX
applications from 2420 to 2480 MHz. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization
ensures excellent device lifetime and reliability.
PTFA240451E
Package H-30265-2
Three-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
45
40
35
30
25
20
15
10
5
0
30
Efficiency
ACP Up
ACP Low
ALT Up
-38
-42
-46
-50
-54
-58
-62
Efficiency -66
-70
-74
32 34 36 38 40 42
Output Power, Avg. (dBm)
Features
• Thermally-enhanced, lead-free and
RoHS-compliant packaging
• Broadband internal matching
• Typical two-carrier CDMA performance at 2450
MHz, 28 V
- Average output power = 10 W
- Linear Gain = 14 dB
- Efficiency = 27%
- Adjacent channel power = –45 dBc
• Typical CW performance, 2450 MHz, 28 V
- Output power at P–1dB = 50 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz
bandwidth at ƒC ± 2.135 MHz offset
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps — 14 — dB
ηD
— 31
—
%
ACPR
— –45
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2008-03-04
1 page  
PTFA240451E
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
2.09 A
2.78 A
3.48 A
4.17 A
0 20 40 60 80
Case Temperature (°C)
100
WiMAX Performance
VDD = 28 V, IDQ = 0.45 A,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
36 -15
Efficiency
30 ƒ = 2.62 GHz
-20
ƒ = 2.68 GHz
24 ƒ = 2.65 GHz
-25
18 -30
12 -35
6 -40
0
15
20 25 30 35 40
Output Power (dBm)
-45
45
WiMAX Performance
VDD = 28 V, ƒ = 2450 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-15
-20
-25 IDQ = 0.28 A
-30 IDQ = 0.67 A
-35
-40 IDQ = 0.45 A
-45
15
20 25 30 35 40
Output Power (dBm)
45
Data Sheet
5 of 10
Rev. 04, 2008-03-04
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA240451E.PDF ] | |
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