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PDF PTFA220121M Data sheet ( Hoja de datos )
| Número de pieza | PTFA220121M | |
| Descripción | High Power RF LDMOS Field Effect Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PTFA220121M
High Power RF LDMOS Field Effect Transistor
12 W, 28 V, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended
for power amplifier applications in the 700 to 2200 MHz. This LDMOS
device offers excellent gain, efficiency and linearity performance in a
small overmolded plastic package.
PTFA220121M
Package PG-SON-10
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
-10 50
-15 45
Efficiency
-20 40
-25 35
-30 30
-35
IMD3
25
-40 20
-45 15
-50 10
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
Features
• Typical two-carrier WCDMA performance at
2140 MHz, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = –45.5 dBc
• Typical two-carrier WCDMA performance at
877 MHz, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = –44.5 dBc
• Typical CW performance, 2140 MHz, 28 V
- POUT = 41.6 dBm
- Efficiency = 53.5%
- Gain = 15.5 dB
• Typical CW performance, 877 MHz, 28 V
- POUT = 41.8 dBm
- Efficiency = 60%
- Gain = 19.9 dB
• Capable of handling 10:1 VSWR @ 28 V, 12 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 150 mA, POUT = 12 W PEP, ƒ = 877 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ Max Unit
Gps
20 20.5 —
dB
D
41 42.5 —
%
IMD — –33 –32 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 21
Rev. 10, 2015-10-23
1 page  
PTFA220121M
Broadband Circuit Impedance
Frequency
MHz
720
820
869
894
920
940
960
1675
1805
1880
1930
1990
2110
2170
2300
2400
2500
2600
2700
Z Source
R jX
1.1 7.7
1.0 6.4
1.3 5.0
1.2 3.6
1.4 3.5
1.5 3.3
1.4 2.8
1.6 0.3
2.0 0.3
2.0 0.3
2.2 –0.9
2.6 –2.0
2.5 –3.1
2.0 –2.6
1.7 –1.7
2.2 –2.5
2.5 –4.5
2.4 –4.1
1.9 –3.1
Z Load
R jX
12.0 4.8
12.4 4.0
10.8 5.9
9.3 6.7
9.1 6.7
9.1 6.9
8.9 6.3
5.0 5.3
4.7 3.2
4.7 2.9
4.2 3.0
3.8 1.8
3.8 1.8
3.6 1.9
3.3 1.6
3.2 0.5
3.0 0.5
2.7 1.2
2.3 1.4
Z Source
720 MHz
Z Load
2700 MHz
720 MHz
Z Source
D
Z Load
G
S
Z0 = 50
0.1 2700 MHz
Data Sheet
5 of 21
Rev. 10, 2015-10-23
5 Page 
PTFA220121M
Typical Performance, 1805 MHz
Pulsed CW Performance
VDD = 28 V, IDQ = 130 mA
20
1785 MHz
19 1795 MHz
1805 MHz
18
17 Gain
16
15
14
25
Efficiency
29 33 37 41
Output Power (dBm)
60
50
40
30
20
10
0
45
Output Power and Efficiency
v. Input Power
VDD = 28 V, IDQ = 130 mA
45 80
1785 MHz
40 1795 MHz
1805 MHz
70
60
50
35
Output Power
Efficiency
40
30
30 20
10
25
5
10 15 20 25
Input Power (W)
0
30
RF Characteristics
Pulsed CW Performance (not subject to production test – verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 130 mA, POUT = 42 W P1dB, ƒ = 1805 MHz
16 µs pulse width, 10% duty cycle, class AB test
Characteristic
Gain
Drain Efficiency
Symbol Min Typ Max Unit
Gps — 17 — dB
D — 52 — %
Data Sheet
11 of 21
Rev. 10, 2015-10-23
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet PTFA220121M.PDF ] | |
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