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PDF PTFA212002E Data sheet ( Hoja de datos )
| Número de pieza | PTFA212002E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFA212002E
Thermally-Enhanced High Power RF LDMOS FET
200 W, 2110 – 2170 MHz
Description
The PTFA212002E is a 200-watt, internally-matched, laterally double-
diffused, GOLDMOS push-pull FET. It is characaterized for single-
and two-carrier WCDMA operation from 2110 to 2170 MHz. Ther-
mally-enhanced packaging provides the coolest operation avail-
able. Full gold metallization ensures excellent device lifetime and
reliability.
PTFA212002E
Package 30275
Two–carrier WCDMA Drive–up
VDD = 28 V, IDQ = 1600 mA, f1 = 2140 MHz, f2 = 2150 MHz,
3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25 35
Drain Efficiency
-30 30
-35 25
-40
Gain
-45
20
15
-50
-55
37
IM3 ACPR
40 43 46
Output Power, Avg. (dBm)
10
5
49
• Thermally-enhanced packaging
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 28 V
- Average output power = 44 W
- Gain = 15 dB
- Efficiency = 27%
- IM3 = –37 dBc
- ACPR < –40 dBc
• Typical CW performance at 2140 MHz, 28 V
- Output power at P–1dB = 220 W
- Efficiency = 56%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 200 W
(CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2 x 800 mA, POUT = 44 W average
f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
14 15
25.5 27
— –37
—
—
–35
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Preliminary Data Sheet
1 of 10
Rev. 02, 2005-05-16
1 page  
PTFA212002E
Broadband Circuit Impedance
Z Source
G
G
D Z Load
S
D
Frequency
MHz
2050
2075
2100
2125
2150
2175
2200
2225
Z Source Ω
R jX
12.21
–12.34
11.36
–12.55
10.52
–12.61
9.73 –12.53
9.00 –12.35
8.33 –12.08
7.73 –11.76
7.20 –11.39
Z Load Ω
R jX
4.95 –6.77
4.80 –6.45
4.66 –6.12
4.52 –5.80
4.39 –5.47
4.27 –5.15
4.16 –4.82
4.06 –4.49
See next page for circuit information.
Z0 = 50 Ω
2225 MHz
0.1
Z Load
2050 MHz
Z Source
2225 MHz
0.2
2050 MHz
0.3
Preliminary Data Sheet
5 of 10
Rev. 02, 2005-05-16
5 Page | ||
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| PDF Descargar | [ Datasheet PTFA212002E.PDF ] | |
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