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PDF PTFA212001E Data sheet ( Hoja de datos )
| Número de pieza | PTFA212001E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
PTFA212001F
Package H-37260-2
PTFA212001E
PTFA212001F
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 30
-28 Efficiency
25
-33 20
-38
IM3
-43
15
10
-48 ACPR 5
-53
34
36 38 40 42 44 46
Average Output Power (dBm)
0
48
Features
• Thermally-enhanced packages, Pb-free and
RoHS compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
• Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
- Efficiency = 34%
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 05.1, 2009-02-24
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-average Ratio Compression
(PARC) at Various Power Levels
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
1
0.1 52 dBm
48 dBm
46 dBm
Input
50.5 dBm
0.01
50 dBm
0.001
1 2 3 45 6 7 8
Peak-to-Average (dB)
PTFA212001E
PTFA212001F
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz
17
–15°C
16
25°C
15
14 85°C
13
12
1
10 100
Output Power (W)
1000
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ = 1600 m A, ƒ = 2140 MHz,
POUT = 53 dBm PEP
-15
-20
-25 3rd order
-30
-35
-40
5th
-45
-50 7th
-55
0
10 20 30 40
Tone Spacing (MHz)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 05.1, 2009-02-24
5 Page 
PTFA212001E/F
Confidential, Limited Internal Distribution
Revision History:
2009-02-24
Previous Version:
2007-12-05, Data Sheet (2006-06-12, Preliminary Data Sheet)
Page
Subjects (major changes since last revision)
1, 2, 9, 10
Update product to V4, with new package technologies. Update package outline diagrams.
1, 2 Update gain specifications.
8 Fixed typing error
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-24
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 05.1, 2009-02-24
11 Page | ||
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| PDF Descargar | [ Datasheet PTFA212001E.PDF ] | |
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