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PDF PTFA211001E Data sheet ( Hoja de datos )
| Número de pieza | PTFA211001E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFA211001E
Thermally-Enhanced High Power RF LDMOS FET
100 W, 2110 – 2170 MHz
Description
The PTFA211001E is a thermally-enhanced, 100-watt, internally-
matched GOLDMOS ® FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Thermally-enhanced packaging provides the
coolest operation available. Full gold metallization ensures excellent
device lifetime and reliability.
PTFA211001E
Package H-30248-2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2140 MHz, 3GPP WCDMA
signal, 8 dB P/A R, 10 MHz carrier spacing
-28
-31
-34
-37
-40
-43
-46
-49
-52
-55
36
IM3 Up
Ef f iciency
ACPR
38 40 42 44
Average Output Power (dBm)
36
32
28
24
20
16
12
8
4
0
46
RF Characteristics
Features
• Thermally-enhanced package, Pb-free and RoHS-
compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 23 W
- Linear Gain = 16 dB
- Efficiency = 28.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 125 W
- Efficiency = 57%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 23 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
15 16
27 28.5
— –37
—
—
–36
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2008-03-04
1 page  
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2070
2110
2140
2170
2210
Z Source Ω
R jX
3.02 –2.80
2.96 –2.32
2.89 –2.01
2.84 –1.66
2.85 –1.20
Z Load Ω
R jX
2.64 1.47
2.57 1.84
2.51 2.10
2.44 2.34
2.40 2.70
See next page for circuit information
PTFA211001E
Z0 = 50 Ω
Z Load
2210 MHz
2070 MHz
Z Source 2210 MHz
2070 MHz
0.1
Data Sheet
5 of 9
Rev. 03, 2008-03-04
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PTFA211001E.PDF ] | |
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