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PDF PTFA210701F Data sheet ( Hoja de datos )
| Número de pieza | PTFA210701F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
70 W, 2110 – 2170 MHz
PTFA210701E
PTFA210701F
Description
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs
designed for single- and dual-carrier WCDMA power amplifier
applications in the 2110 MHz to 2170 MHz band. Features include
input and output matching, and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA210701E
Package H-36265-2
PTFA210701F
Package H-37265-2
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 35
-35
Efficiency
-40 IM3
-45
-50
ACPR
30
25
20
15
-55 10
-60
30
32 34 36 38 40 42
Average Output Power (dBm)
5
44
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 42 dBm
- Linear Gain = 16.5 dB
- Efficiency = 27.0%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –42.5 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 80 W
- Efficiency = 58%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
70 W (CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 550 mA, POUT = 18 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
15.5 16.5
28 29
— –36.5
—
—
–35.5
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2009-02-18
1 page  
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2060
2110
2140
2170
2220
Z Source Ω
R jX
19.94
1.61
20.94
0.77
21.41
0.11
21.83
–0.69
22.26
–2.09
Z Load
2220 MHz
2060 MHz
0.1
Z Source
2060 MHz
2220 MHz
PTFA210701E
PTFA210701F
Z Load Ω
R jX
4.50
–2.87
4.20
–2.50
4.02
–2.29
3.88
–2.07
3.66
–1.66
Z0 = 50 Ω
See next page for circuit information
Data Sheet
5 of 10
Rev. 02.1, 2009-02-18
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA210701F.PDF ] | |
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