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PDF PTFA210601E Data sheet ( Hoja de datos )
| Número de pieza | PTFA210601E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFA210601E
PTFA210601F
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 2110 – 2170 MHz
Description
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA210601E
Package H-36265-2
PTFA210601F
Package H-37265-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-25 35
-30
Efficiency
30
-35
IM3
-40
25
20
-45 15
ACPR
-50 10
-55
31
33 35 37 39 41
Average Output Power (dBm)
5
43
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 12 W
- Linear Gain = 16 dB
- Efficiency = 27.0%
- Intermodulation distortion = –38 dBc
- Adjacent channel power = –44 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 68 W
- Efficiency = 58.5%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 12 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
15.0 16.0
26.0 27.0
— –38
—
—
–37
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2007-11-19
1 page  
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2070
2110
2140
2170
2210
Z Source Ω
R jX
10.29
–5.79
9.46 –6.02
8.79 –5.95
8.14 –5.91
7.19 –5.72
Z Load Ω
R jX
4.91 1.57
4.83 1.75
4.85 2.12
4.76 2.38
4.66 2.55
See next page for reference circuit information
PTFA210601E
PTFA210601F
Z0 = 50 Ω
Z Load
2210 MHz
2070 MHz
Z Source
0.1 2210 MHz
2070 MHz
0.2
Data Sheet
5 of 10
Rev. 03, 2007-11-19
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA210601E.PDF ] | |
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