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Número de pieza | PTFA210301E | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! PTFA210301E
Thermally-Enhanced High Power RF LDMOS FET
30 W, 2110 – 2170 MHz
Description
The PTFA210301E is a thermally-enhanced, 30-watt, internally
matched GOLDMOS FET intended for WCDMA applications. It is
optimized for single- and two-carrier WCDMA operation from 2110
to 2170 MHz. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device
lifetime and reliability.
PTFA210301E
Package H-30265-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 300 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-25 30 IM3
Efficiency
-30 25
-35
IM3 Up
-40 IM3 Low
20
15
-45 10
ACPR
-50 5
-55
27
29 31 33 35 37 39
Average Output Power (dBm)
0
41
Features
• Thermally-enhanced packaging, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 33 dBm
- Linear Gain = 16.5 dB
- Intermodulation distortion = –50 dBc
- Adjacent channel power = –52 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 40 W
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
RF Characteristics
2-Carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 300 mA, POUT = 8 W average
f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Gps — 17 — dB
Drain Efficiency
ηD
— 27
—
%
Intermodulation Distortion
IMD — –38 — dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2008-03-04
1 page PTFA210301E
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
2070
2110
2140
2170
2210
G
S
Z Source Ω
R jX
14.70
-9.41
14.33
-9.52
14.07
-9.61
13.81
-9.69
13.40
-9.79
Z Load Ω
R jX
7.26
-3.82
7.01
-3.70
6.91
-3.69
6.77
-3.53
6.52
-3.39
Z0 = 50 Ω
2210 MHz
Z Load
2070 MHz
0.1 Z Source 2070 MHz
2210 MHz
0.2
Data Sheet
5 of 9
Rev. 03, 2008-03-04
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet PTFA210301E.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFA210301E | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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