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PDF BSG0813NDI Data sheet ( Hoja de datos )
| Número de pieza | BSG0813NDI | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSG0813NDI (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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BSG0813NDI
Power Block
Features
• Dual asymmetric N-channel OptiMOS™5 MOSFET
• Logic level (4.5V rated)
• Optimized for high performance buck converters
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
• Monolithic integrated Schottky like diode
Product Summary
Q1 Q2
VDS 25 25 V
RDS(on),max
VGS=10 V
3 1.2 mW
VGS=4.5 V
4 1.7
ID 50 50 A
S1/D2 (VPhase) (5)
S1/D2 (VPhase) (6)
(4) D1 (Vin)
Q1 (9)
(3) D1 (Vin)
S1/D2 (VPhase) (7)
Q2
G2 (GLS) (8)
(10)
(2) S1 (VPhase)
(1) G1 (GHS)
S2 (GND)
Top view
Type
BSG0813NDI
Package
PG-TISON8-4
Marking
0813NDI
Maximum ratings, at Tj=25°C, unless otherwise specified 2)
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev.2.1
I D T C=70 °C, V GS=10 V
T C=70 °C, V GS=4.5 V
T A=25 °C,
V GS=4.5 V3)
T A=25 °C,
V GS=4.5 V4)
I D,pulse
E AS
V GS
T C=70 °C
Q1: I D=10 A,
Q2: I D=20 A,
R GS=25 W
T j=25 °C
P tot T A=25 °C3)
T A=25 °C4)
T j, T stg
page 1
Value
Q1 Q2
50 50
50 50
31 50
Unit
A
19 33
160 160
30 90 mJ
±16
6.25 6.25
2.5 2.5
-55 ... 150
55/150/56
V
W
°C
2016-03-08
1 page  
1 Power dissipation (Q1)
P tot=f(T A)4)
2 Power dissipation (Q2)
P tot=f(T A)4)
BSG0813NDI
33
2.5 2.5
22
1.5 1.5
11
0.5 0.5
0
0 40
3 Drain current (Q1)
I D=f(T C)
parameter: V GS≥10 V
60
80
TA [°C]
120
0
160 0 40
4 Drain current (Q2)
I D=f(T C)
parameter: V GS≥10 V
60
80
TA [°C]
120
160
50 50
40 40
30 30
20 20
10 10
0
0
Rev.2.1
40 80 120
TC [°C]
0
160 0
page 5
40 80 120
TC [°C]
160
2016-03-08
5 Page 
25 Typ. gate charge (Q1)
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
10
26 Typ. gate charge (Q2)
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
10
BSG0813NDI
8
12 V
5V
6 20 V
8
12 V
20 V
6 5V
44
22
0
0 2 4 6 8 10 12
Qgate [nC]
27 Drain-source breakdown voltage (Q1)
V BR(DSS)=f(T j); I D=1 mA
28
0
14 0
10 20
Qgate [nC]
28 Typ. drain-source leakage current (Q2)
I DSS=f(V DS ); V GS=0 V
parameter: T j
10-2
30
27
26 10-3
125 °C
25
100 °C
24 10-4
75 °C
23
22 10-5
21
20
-60 -20 20 60 100 140 180
Tj [°C]
10-6
0
25 °C
5 10 15
VDS [V]
20
Rev.2.1
page 11
2016-03-08
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BSG0813NDI.PDF ] | |
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