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PDF PXFC191507FC Data sheet ( Hoja de datos )
| Número de pieza | PXFC191507FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PXFC191507FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 1805 – 1990 MHz
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
22 BW 3.84 MHz
21 Gain
60
50
20 40
19 30
18 20
Efficiency
17 10
16
29
33 37 41 45
Output Power (dBm)
c191507fc_g1
0
49 53
PXFC191507FC
Package H-37248G-4/2
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB test
- Output power at P1dB = 140 W
- Efficiency = 54%
- Gain = 19.5 dB
• Typical single-carrier WCDMA performance,
1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test
Model 1 with 16DPCH
- Output power = 32 W avg
- Efficiency = 34%
- Gain = 20 dB
- ACPR = –31 dBc@ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 150 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 960 mA, POUT = 32 W avg, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
Min
19
29
—
Typ
20.5
31
–33
Max
—
—
–31
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2016-06-22
1 page  
Reference Circuit , 1930 – 1990 MHz
R804
S2
R805
C802
R803
C801 R802
R801
S3
C803
(61)
S1
C101
C102
R101
RF_IN
C104
C103
C106
C105
R102
RO4350, .020
PXFC191507FC_IN_01
Reference circuit assembly diagram (not to scale)
PXFC191507FC
RO4350, .020
(61)
C201 C202 C203 C204
C209
VDD
C211
C212
C205 C206 C207 C208
C214
C213
RF_OUT
C210
VDD
PXFC191507FC_OUT_01
c191507fc_CD_08-26-2014
Data Sheet
5 of 8
Rev. 02.1, 2016-06-22
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PXFC191507FC.PDF ] | |
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