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PDF IDW75D65D1 Data sheet ( Hoja de datos )
| Número de pieza | IDW75D65D1 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Diode
RapidSwitchingEmitterControlledDiode
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Datasheet
IndustrialPowerControl
1 page  
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Dynamic Characteristic
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
Symbol Conditions
LE
Value
Unit
min. typ. max.
- 7.0 - nH
Switching Characteristics, Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=75.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
Value
Unit
min. typ. max.
- 108 - ns
- 1.25 - µC
- 19.9 - A
- -1100 - A/µs
- 127 - ns
- 0.48 - µC
- 6.4 - A
- -32 - A/µs
Switching Characteristics, Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=75.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
Value
Unit
min. typ. max.
- 174 - ns
- 4.16 - µC
- 37.9 - A
- -1170 - A/µs
1) For a balanced current flow through pins 1 and 3.
5
Rev.2.1,2014-12-10
5 Page 
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
VGE(t)
90% VGE
IC(t)
VCE(t)
90% IC
10% IC
10% VGE
t
90% IC
10% IC
t
I,V
dIF/dt
trr = ta + tb
Qrr = Qa + Qb
ab
Qa Qb
dI
Figure C. Definition of diode switching
characteristics
t
VGE(t)
td(off)
tf
Figure A.
90% VGE
IC(t)
td(on)
tr
10% VGE
t
t
VCE(t)
2% IC
t
Eoff =
t1
t1
Figure B.
t2
VCE x IC x dt
t2
Eon =
t3
t3
t4
VCE x IC x dt
2% VCE
t4 t
Figure D.
CC
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
11 Rev.2.1,2014-12-10
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IDW75D65D1.PDF ] | |
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