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PDF IRL40B209 Data sheet ( Hoja de datos )
| Número de pieza | IRL40B209 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRL40B209
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
1.0m
max
1.25m
G
ID (Silicon Limited)
414A
S ID (Package Limited) 195A
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
G
Gate
GDS
TO-220AB
IRL40B209
D
Drain
S
Source
Base part number
IRL40B209
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL40B209
6
ID = 100A
5
4
3
2 TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
450
400
350
300
250
200
150
100
50
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
May 18, 2015
1 page  
IRL40B209
1000
TJ = 175°C
100
TJ = 25°C
10
0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
Fig 9. Typical Source-Drain Diode Forward Voltage
50
Id = 5.0mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
Limited by Package
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
VDS, Drain-toSource Voltage (V)
100
Fig 10. Maximum Safe Operating Area
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
4.0
VGS = 3.5V
3.5 VGS = 4.5V
VGS = 6.0V
3.0
VGS = 8.0V
VGS = 10V
2.5
Fig 12. Typical Coss Stored Energy
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 18, 2015
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRL40B209.PDF ] | |
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