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PDF FCMT199N60 Data sheet ( Hoja de datos )
| Número de pieza | FCMT199N60 | |
| Descripción | N-Channel SuperFET II MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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August 2014
FCMT199N60
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
Features
• 650 V @ TJ = 150°C
• RDS(on) = 170 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Server and Telecom Power Supplies
• Solar Inverters
• Adaptors
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as server/telecom power, adaptor and solar
inverter applications.
The Power88 package is an ultra-slim surface-mount package
(1 mm high) with a low profile and small footprint (8x8 mm2).
SuperFET II MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance
and separated power and drive sources. Power88 offers Mois-
ture Sensitivity Level 1 (MSL 1).
D
S2
S2
S1 G
Power88
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
G
S1 S2
S1 : Driver Source
S2 : Power Source
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
-DC
-AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
FCMT199N60
600
±20
±30
20.2
12.7
60.6
400
4.0
2.1
20
100
208
1.67
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
FCMT199N60
0.6
45
Unit
oC/W
©2014 Fairchild Semiconductor Corporation
FCMT199N60 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.1
0.05
PDM
*Notes:
t1
t2
0.02
0.01
Single pulse
1. ZθJC(t) = 0.6oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
10-5
10-4
10-3
10-2
10-1
1
t1Rt,1e,RcRetecactnatganngugulaluarlraPPr uuPllussleeseDDuDururaartiatoitnoion[ns[e[ssce]ecc]]
FCMT199N60 Rev. C2 5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCMT199N60.PDF ] | |
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