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PDF SIE878DF Data sheet ( Hoja de datos )

Número de pieza SIE878DF
Descripción N-Channel 25V (D-S) MOSFET
Fabricantes Vishay 
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No Preview Available ! SIE878DF Hoja de datos, Descripción, Manual

New Product
N-Channel 25-V (D-S) MOSFET
SiE878DF
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0052 at VGS = 10 V
25
0.0068 at VGS = 4.5 V
ID (A)a
45
45
Qg (Typ.)
11.2 nC
Package Drawing
www.vishay.com/doc?68797
PolarPAK
10 9 8 7 6
D GS S D
67
8 9 10
D D S GD
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• VRM, POL
• DC/DC Conversion
• Server
• High-Side Switch
G
D
D GS
S
1 23
4
Top View
D
5
5
Top surface is connected to pins 1, 5, 6, and 10
4 32
Bottom View
1
Ordering Information: SiE878DF-T1-GE3 (Lead (Pb)-free) and Halogen-free
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?65456
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
± 20
45a
42.5
24b, c
19b, c
100
20.8
4.3b, c
25
31
25
16
5.2b, c
3.3b, c
- 55 to 150
260
V
A
mJ
W
°C
Notes:
a. TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
www.vishay.com
1

1 page




SIE878DF pdf
New Product
SiE878DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 25
50
Package Limited
40
30
20
10
20
15
10
5
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Current Derating*
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
www.vishay.com
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