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PDF SI4126DY Data sheet ( Hoja de datos )
| Número de pieza | SI4126DY | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFET
Si4126DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.00275 at VGS = 10 V
30
0.0034 at VGS = 4.5 V
ID (A)a
39
35
Qg (Typ.)
30 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Low-Side DC/DC Conversion
- Notebook
- Gaming
D
G
Top View
Ordering Information: Si4126DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
39
31
26.5b, c
21b, c
70
7.0
3.1b, c
40
80
7.8
5.0
3.5b, c
2.2b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Symbol
RthJA
RthJF
Document Number: 69994
S-80895-Rev. B, 21-Apr-08
Typical
29
13
Maximum
35
16
Unit
°C/W
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45 10
Si4126DY
Vishay Siliconix
36 8
27 6
18 4
92
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.0
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
1.6
1.2
0.8
0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69994
S-80895-Rev. B, 21-Apr-08
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4126DY.PDF ] | |
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