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Número de pieza | IPI086N10N3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPI086N10N3G (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO 252)
ID
100 V
8.2 mW
80 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Package
Marking
PG-TO220-3
086N10N
PG-TO262-3
086N10N
PG-TO263-3
083N10N
PG-TO252-3
082N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=73 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
58
320
110
±20
125
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.6
page 1
2013-07-09
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
10 V
250
7.5 V
200
6V
150
100
50
5.5 V
5V
4.5 V
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
18 4.5 V
15 5 V
12
6V
9
7.5 V
10 V
6
3
0
012345
VDS [V]
0
0 20 40 60 80 100
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
150
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100
100 80
60
50
0
0
Rev. 2.6
25 °C
175 °C
246
VGS [V]
40
20
0
80
page 5
40 80
ID [A]
120
2013-07-09
5 Page PG-TO-252 (D-Pak)
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Rev. 2.6
page 11
2013-07-09
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IPI086N10N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPI086N10N3G | Power-Transistor | Infineon |
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