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PDF SIJ482DP Data sheet ( Hoja de datos )
| Número de pieza | SIJ482DP | |
| Descripción | N-Channel 80-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 80 V (D-S) MOSFET
SiJ482DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
0.0062 at VGS = 10 V
80 0.0065 at VGS = 7.5 V
0.0095 at VGS = 4.5 V
ID (A)a, g Qg (Typ.)
60 24 nC
PowerPAK® SO-8L Single
6.15 mm
5.13 mm
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Capable of Operating with 5 V Gate Drive
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Primary Side Switch
• Synchronous Rectification
• High Current Switching
D
D
4
G
3
S
2
S
1
S
Ordering Information:
SiJ482DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
80
± 20
60g
60g
21.1b, c
16.9b, c
100
60g
4.5b, c
30
45
69.4
44.4
5b, c
3.2b, c
- 55 to 150
260
G
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
1.3
25
°C/W
1.8
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
Document Number: 63728
For technical support, please contact: [email protected]
www.vishay.com
S12-0544-Rev. A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
90
SiJ482DP
Vishay Siliconix
72
54 Package Limited
36
18
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
85 2.5
68 2.0
51 1.5
34 1.0
17 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63728
For technical support, please contact: [email protected]
www.vishay.com
S12-0544-Rev. A, 12-Mar-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SIJ482DP.PDF ] | |
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