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PDF SIJ478DP Data sheet ( Hoja de datos )
| Número de pieza | SIJ478DP | |
| Descripción | N-Channel 80-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiJ478DP
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
80
RDS(on) () Max.
0.0080 at VGS = 10 V
0.0088 at VGS = 6.0 V
0.0115 at VGS = 4.5 V
ID (A)
60a
60a
54
PowerPAK® SO-8L Single
Qg (Typ.)
17.1 nC
6.15 mm
5.13 mm
D
4
G
3
S
2
S
1
S
Ordering Information:
SiJ478DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
• LED Backlighting
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
80
± 20
60a
52.7
18.6b, c
14.9b, c
150
60a
4.5b, c
30
45
62.5
40
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
1.5
Maximum
25
2.0
Unit
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
S13-1386-Rev. A, 17-Jun-13
1
Document Number: 62868
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
75
SiJ478DP
Vishay Siliconix
60
Package Limited
45
30
15
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
75 2.5
60 2.0
45 1.5
30 1.0
15 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
S13-1386-Rev. A, 17-Jun-13
5
Document Number: 62868
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet SIJ478DP.PDF ] | |
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