|
|
PDF SIJ458DP Data sheet ( Hoja de datos )
| Número de pieza | SIJ458DP | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SIJ458DP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
New Product
N-Channel 30 V (D-S) MOSFET
SiJ458DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.0022 at VGS = 10 V
0.0026 at VGS = 4.5 V
ID (A)a, g
60
60
Qg (Typ.)
40.6 nC
PowerPAK® SO-8L Single
6.15 mm
5.13 mm
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• POL
• VRM
• DC/DC Converters
• High Current Switching
D
4
G
3
S
2
S
1
S
Ordering Information: SiJ458DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
G
S
N-Channel MOSFET
Limit
30
± 20
60g
60g
35.5b, c
28.4b, c
80
60g
4.5b, c
40
80
69.4
44.4
5.0b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
20
1.3
25
°C/W
1.8
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
SiJ458DP
Vishay Siliconix
120
90
Package Limited
60
30
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
85 2.5
68 2.0
51 1.5
34 1.0
17 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIJ458DP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SIJ458DP | N-Channel 30-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |