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PDF SIJ470DP Data sheet ( Hoja de datos )
| Número de pieza | SIJ470DP | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiJ470DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () Max.
0.0091 at VGS = 10 V
0.0100 at VGS = 7.5 V
ID (A)a
58.8
54.6
PowerPAK® SO-8L Single
Qg (Typ.)
28.5 nC
6.15 mm
5.13 mm
D
4
G
3
S
2
S
1
S
Ordering Information:
SiJ470DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• ThunderFET® Technology Optimizes Balance
of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
• LED Backlighting
• High Current Switching
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
58.8
47
17.4b, c
13.9b, c
150
51.6
4.5b, c
40
80
56.8
36.3
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
1.8
Maximum
25
2.2
Unit
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
S13-1672-Rev. A, 29-Jul-13
1
Document Number: 62883
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiJ470DP
Vishay Siliconix
65
52
39
26
13
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
70 2.5
56 2.0
42 1.5
28 1.0
14 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
S13-1672-Rev. A, 29-Jul-13
5
Document Number: 62883
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SIJ470DP.PDF ] | |
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