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PDF SI4190ADY Data sheet ( Hoja de datos )
| Número de pieza | SI4190ADY | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 100 V (D-S) MOSFET
Si4190ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () Max.
0.0088 at VGS = 10 V
0.0094 at VGS = 7.5 V
0.0120 at VGS = 4.5 V
SO-8
ID (A)a
18.4
17.8
15.8
Qg (Typ.)
20.7 nC
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information:
Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server
• Industrial
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
100
± 20
18.4
14.6
13b, c
10.3b, c
70
5.4
2.7b, c
30
45
6
3.8
3b, c
1.9b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 63826
For technical support, please contact: [email protected]
www.vishay.com
S12-0541-Rev. A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
Si4190ADY
Vishay Siliconix
16
12
8
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.5 2.0
6.0 1.6
4.5 1.2
3.0 0.8
1.5 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63826
For technical support, please contact: [email protected]
www.vishay.com
S12-0541-Rev. A, 12-Mar-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4190ADY.PDF ] | |
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