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PDF SI2392ADS Data sheet ( Hoja de datos )
| Número de pieza | SI2392ADS | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si2392ADS
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.126 at VGS = 10 V
100 0.144 at VGS = 6 V
0.189 at VGS = 4.5 V
SOT-23 (TO-236)
ID (A) a
3.1
2.9
2.6
Qg (TYP.)
2.9 nC
D
3
2
S
1
G
Top View
Marking Code: G2
Ordering Information:
Si2392ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• DC/DC converters / boost converters
• Load switch
• LED backlighting in LCD TVs
• Power management for mobile
computing
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
3.1
2.5
2.2 b, c
1.8 b, c
8
2.1
1 b, c
3
0.45
2.5
1.6
1.25 b, c
0.8 b, c
-55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
SYMBOL
RthJA
RthJF
TYPICAL
75
40
MAXIMUM
100
50
UNIT
°C/W
S14-0909-Rev. A, 28-Apr-14
1
Document Number: 62960
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si2392ADS
Vishay Siliconix
3.5
2.8
2.1
1.4
0.7
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3 1.0
2.4 0.8
1.8 0.6
1.2 0.4
0.6 0.2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0909-Rev. A, 28-Apr-14
5
Document Number: 62960
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI2392ADS.PDF ] | |
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