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PDF MBRJ20H100CTG Data sheet ( Hoja de datos )

Número de pieza MBRJ20H100CTG
Descripción SWITCHMODE Power Rectifier
Fabricantes ON Semiconductor 
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MBRJ20H100CTG
SWITCHMODE
Power Rectifier
100 V, 20 A
Features and Benefits
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
GuardRing for Stress Protection
This is a PbFree Device
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO220)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2, 4
3
TO220 FULLPAK]
CASE 221AH
CT SUFFIX
MARKING DIAGRAM
AYWW
B20H100G
AKA
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ISOLATED TO220
A = Assembly Location
Y = Year
WW = Work Week
B20H100 = Device Code
G = PbFree Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 1
1
Publication Order Number:
MBRJ20H100CT/D

1 page




MBRJ20H100CTG pdf
MBRJ20H100CTG
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 9. Test Circuit
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 10. CurrentVoltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL
[
1
2
LI
2
LPK
BVDUT
BVDUT° VDD
EQUATION (2):
WAVAL [
1
2
LI
2
LPK
http://onsemi.com
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