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PDF SIE862DF Data sheet ( Hoja de datos )
| Número de pieza | SIE862DF | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFET
SiE862DF
Vishay Siliconix
PRODUCT SUMMARY
ID (A)a
VDS (V)
RDS(on) (Ω)e
Silicon Package
Limit
Limit Qg (Typ.)
0.0032 at VGS = 10 V 134
30
0.0041 at VGS = 4.5 V 119
50
23 nC
50
Package Drawing
www.vishay.com/doc?68797
PolarPAK
10 9 8 7 6
D GS S D
67
8 9 10
D D S GD
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size ≤ 100 V
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• VRM
• DC/DC Conversion
• Synchronous Rectification
• POL
G
D
D GS
S
1 23
4
Top View
D
5
5
Top surface is connected to pins 1, 5, 6, and 10
4 32
Bottom View
1
Ordering Information: SiE862DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?65026
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
± 20
134 (Silicon Limit)
50a (Package Limit)
50a
30b, c
24b, c
100
50a
4.3b, c
40
80
104
66
5.2b, c
3.3b, c
- 55 to 150
260
V
A
mJ
W
°C
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
www.vishay.com
1
1 page  
New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150 120
120
90
60 Package Limited
30
100
80
60
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SIE862DF.PDF ] | |
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