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PDF SI4590DY Data sheet ( Hoja de datos )
| Número de pieza | SI4590DY | |
| Descripción | N- and P-Channel 100V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4590DY
Vishay Siliconix
N- and P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
100
-100
RDS(on) () MAX.
0.057 at VGS = 10 V
0.072 at VGS = 4.5 V
0.183 at VGS = -10 V
0.205 at VGS = -4.5 V
ID (A) a Qg (TYP.)
5.6
4
5
-3.4
11.6
-3.2
SO-8 Dual
D2
D2 5
D1 6
D1 7
8
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• H bridge / DC-AC inverter
- Brushless DC motors
D1 S2
4
3 G2
2 S2
1 G1
S1
Top View
Ordering Information:
Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
N-Channel MOSFET
S1
G2
P-Channel MOSFET
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (100 μs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current (100 μs Pulse Width)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TF = 25 °C
TF = 70 °C
TA = 25 °C
TA = 70 °C
TF = 25 °C
TA = 25 °C
L = 0.1 mH
TF = 25 °C
TF = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
100 -100
± 20
5.6 -3.4
4.5 -2.7
4.5 b,c
-2.5 b,c
3.6 b,c
-2 b,c
30 -20
3 -3.5
2 b,c
-1.9 b,c
30 -20
5 -20
1.3 20
3.6 4.2
2.3 2.7
2.3 b,c
2.3 b,c
1.5 b,c
1.5 b,c
-55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
TYP. MAX.
Maximum Junction-to-Ambient b,d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
RthJA
RthJF
35 55
20 35
Notes
a. Based on TF = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W (n-channel) and 90 °C/W (p-channel).
P-CHANNEL
TYP. MAX.
33 55
17 30
UNIT
°C/W
S14-0146-Rev. A, 27-Jan-14
1
Document Number: 62937
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.15
10 TJ = 150 °C
0.12
ID = 2 A
0.09
TJ = 25 °C
0.06
1
0.03
Si4590DY
Vishay Siliconix
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.5 30
2.3 25
2.1 20
1.9
1.7 ID = 250 μA
15
10
1.5 5
1.3
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1 1 10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID(on) Limited
10
IDM Limited
1
0.1
0.01
TA = 25 °C
100 μs
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
0.1
BVDSS Limited
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0146-Rev. A, 27-Jan-14
5
Document Number: 62937
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si4590DY
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90°C/W
3. TJM - TA = PDMZthJA (t)
4. Surface Mounted
0.001
0.01 0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambien
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62937.
S14-0146-Rev. A, 27-Jan-14
11
Document Number: 62937
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet SI4590DY.PDF ] | |
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