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PDF SI4599DY Data sheet ( Hoja de datos )
| Número de pieza | SI4599DY | |
| Descripción | N- and P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
Si4599DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
40
- 40
RDS(on) (Ω)
0.0355 at VGS = 10 V
0.0425 at VGS = 4.5 V
0.045 at VGS = - 10 V
0.062 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
6.8
5.3
6.2
- 5.8
- 5.0
11.8
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge Converter
D1
G2
G1
RoHS
COMPLIANT
S2
Top View
Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 40
- 40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
6.8 - 5.8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
5.4
5.6b, c
- 4.7
- 4.7b, c
TA = 70 °C
4.4b, c
- 3.7b, c
Pulsed Drain Current
IDM 20
- 20
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.5
1.6b, c
- 2.5
- 1.6b, c
Pulsed Source-Drain Current
ISM 20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0 1 mH
IAS
EAS
7
2.45
- 10
5
TC = 25 °C
3.0 3.1
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.9
2.0b, c
2
2.0b, c
TA = 70 °C
1.25b, c
1.25b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
54 64
33 42
P-Channel
Typ.
Max.
49 62.5
30 40
Unit
°C/W
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
1
1 page  
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.20
TJ = 150 °C
10
0.16
TJ = 25 °C
1 0.12
Si4599DY
Vishay Siliconix
ID = 5 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
0.2 ID = 250 µA
0.0 ID = 5 mA
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by R DS(on)*
10
0.08
0.04
TA = 125 °C
TA = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
64
48
32
16
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
1 ms
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
1
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
100 ms
1s
10 s
DC
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5
5 Page 
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4599DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68971.
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
11
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet SI4599DY.PDF ] | |
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