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PDF SI4288DY Data sheet ( Hoja de datos )
| Número de pieza | SI4288DY | |
| Descripción | Dual N-Channel 40V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 40 V (D-S) MOSFET
Si4288DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
40
RDS(on) ()
0.020 at VGS = 10 V
0.023 at VGS = 4.5 V
ID (A)a
9.2
8.6
Qg (Typ.)
4.9
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFETPower MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• CCFL Inverter
• DC/DC Converter
• HDD
D1
D2
G1 G2
Top View
Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
Limit
40
± 20
9.2
7.4
7.4b, c
5.9b, c
50
2.6
1.6b, c
50
10
5
3.1
2
2b, c
1.28b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady-State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Symbol
RthJA
RthJF
Typ.
49
30
Max.
62.5
40
Unit
°C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
Si4288DY
Vishay Siliconix
8
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
4.0 1.5
3.2 1.2
2.4 0.9
1.6 0.6
0.8 0.3
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4288DY.PDF ] | |
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