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PDF SI4286DY Data sheet ( Hoja de datos )
| Número de pieza | SI4286DY | |
| Descripción | Dual N-Channel 40V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 40 V (D-S) MOSFET
Si4286DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
40 0.0325 at VGS = 10 V
0.040 at VGS = 4.5 V
ID (A)a
7
6.3
Qg (Typ.)
3.3 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
APPLICATIONS
• DC/DC Converter
- External HDD
- Notebook System Power
• LCD Display Backlighting
D1
D2
G1 G2
Top View
Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
40
± 20
7
5.6
5.7b, c
4.6b, c
20
2.4
1.6b, c
8
3.2
2.9
1.86
1.9b, c
1.23b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Symbol
RthJA
RthJF
Typical
55
35
Maximum
65
43
Unit
°C/W
Document Number: 67599
www.vishay.com
S11-1151-Rev. A, 13-Jun-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
Si4286DY
Vishay Siliconix
6
5
3
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3.5 1.25
2.8 1.00
2.1 0.75
1.4 0.50
0.7 0.25
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.00
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67599
www.vishay.com
S11-1151-Rev. A, 13-Jun-11
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4286DY.PDF ] | |
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