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PDF BUF646 Data sheet ( Hoja de datos )
| Número de pieza | BUF646 | |
| Descripción | Silicon NPN High Voltage Switching Transistor | |
| Fabricantes | TEMIC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUF646 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TELEFUNKEN Semiconductors
BUF646 • BUF646A
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planarpassivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
95 9630
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
xTcase 25°C
Type
BUF646
BUF646A
BUF646
BUF646A
Symbol
VCEO
VCEO
VCES
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
450
850
1000
9
7
14
3
5
70
150
–65 to +150
Unit
V
V
V
V
V
A
A
A
A
W
°C
°C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
RthJC
Value
1.78
Unit
K/W
Rev. A1: 01.05.1995
1 (8)
1 page  
TELEFUNKEN Semiconductors
BUF646 • BUF646A
Typical Characteristics (Tcase = 25_C unless otherwise specified)
8
6
4
2 0.1 x IC < IB2 < 0.5 x IC
VCESat < 2V
0
0
95 10560
100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )
Figure 3. VCEW – Diagram
100
1.76 K/W
10 12.5 K/W
1
25 K/W
0.1
50 K/W
RthJA = 85 K/W
0.01
0.001
0
95 10545
25 50 75 100 125 150
Tcase ( °C )
Figure 6. Ptot vs.Tcase
100
FBSOA
10
vTj 125°C
100
RBSOA
10
vTj 125°C
1
0.1
0.01
1
95 9897
BUF646
BUF646A
ttr 0.2ms
10 100 1000 10000
VCE – Collector Emitter Voltage ( V )
Figure 4. IC vs. VCE
100
VCE = 5V
10
1
0.1 BUF646A
0.01
1
95 9898
BUF646
10 100 1000 10000
VCE – Collector Emitter Voltage ( V )
Figure 7. IC vs. VCE
100
Tcase = 125°C
Tcase = 25°C
10
1
0.01
94 9202
2V
Tcase = 25°C
0.1 1
IC - Collector Current (A)
10
Figure 5. hFE vs. IC
Rev. A1: 01.05.1995
1
0.01
94 9203
0.1 1
IC - Collector Current (A)
Figure 8. hFE vs. IC
10
5 (8)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUF646.PDF ] | |
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