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PDF MTN2510LH8 Data sheet ( Hoja de datos )
| Número de pieza | MTN2510LH8 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTN2510LH8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C741H8
Issued Date : 2015.10.15
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN2510LH8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=20A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
100V
45A
8.6A
19.3mΩ
20.5mΩ
Symbol
MTN2510LH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTN2510LH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTN2510LH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C741H8
Issued Date : 2015.10.15
Revised Date :
Page No. : 5/10
Typical Characteristics
Typical Output Characteristics
100
Brekdown Voltage vs Ambient Temperature
1.4
80
60
40
20
0
0
10V,9V,8V,7V, 6V, 5V
4V
3.5V
3V
VGS=2.5V
4 8 12 16
VDS, Drain-Source Voltage(V)
20
Static Drain-Source On-State resistance vs Drain Current
100
In descending order
VGS=3V
4.5V
6V
10V
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1 1
10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
ID=30A
160
120
80
40
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
2468
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4 VGS=10V, ID=30A
2
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C : 19.3mΩ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTN2510LH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN2510LH8.PDF ] | |
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