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PDF MTE115P10KQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTE115P10KQ8 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE115P10KQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C165Q8
Issued Date : 2015.09.24
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTE115P10KQ8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free and Halogen-free package
BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-6V, ID=-2A
-100V
-3.7A
97mΩ(typ)
113mΩ(typ)
Equivalent Circuit
MTE115P10KQ8
Outline
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTE115P10KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE115P10KQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C165Q8
Issued Date : 2015.09.24
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
100
10
0.1
Ciss
Coss
Crss
1 10
-VDS, Drain-Source Voltage(V)
100
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
1 ID=-1mA
0.8
0.6 ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
100
VDS=-10V
Pulsed
TA=25°C
0.01 0.1
1
-ID, Drain Current(A)
Maximum Safe Operating Area
10
10 100μs
1ms
1 10ms
100ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
1s
DC
0.01
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-50V
6 VDS=-20V
4 VDS=-80V
2
ID=-3.7A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TA=25°C, VGS=-10V, RθJA=40°C/W
0.0
25
50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTE115P10KQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTE115P10KQ8.PDF ] | |
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