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PDF MTC2790KQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTC2790KQ8 | |
| Descripción | N- And P-Channel Logic Level Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTC2790KQ8 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C121Q8
Issued Date : 2015.11.17
Revised Date : 2015.11.18
Page No. : 1/12
N- And P-Channel Logic Level Enhancement Mode MOSFET
MTC2790KQ8 BVDSS
ID@VGS=10V(-10V), TA=25°C
RDSON(TYP.)@VGS=10V(-10V)
RDSON(TYP.)@VGS=4.5V(-4.5V)
RDSON(TYP.)@VGS=4V(-4V)
N-CH
30V
7A
12.7mΩ
16.6mΩ
18.5mΩ
P-CH
-30V
-6A
41.8mΩ
61.6mΩ
69.9mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
• ESD protected gate
Equivalent Circuit
MTC2790KQ8
Outline
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTC2790KQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC2790KQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C121Q8
Issued Date : 2015.11.17
Revised Date : 2015.11.18
Page No. : 5/12
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180 ID=3A
160
140
120
100
80
60
40
20
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=3A
2 RDSON@Tj=25°C : 12.7mΩ typ.
1.6
1.2
0.8
VGS=4.5V, ID=3A
0.4 RDSON@Tj=25°C : 16.6mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
1.6
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
ID=1mA
100 C oss 1
0.8
Crss
0.6
ID=250μA
10
0.1
10
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
1
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=7A
6
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
4
2
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
MTC2790KQ8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Spec. No. : C121Q8
Issued Date : 2015.11.17
Revised Date : 2015.11.18
Page No. : 11/12
Carrier Tape Dimension
Recommended wave soldering condition
Product
Peak Temperature
MTC2790KQ8
Soldering Time
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTC2790KQ8.PDF ] | |
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