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PDF MTB6D0N03BJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTB6D0N03BJ3 | |
| Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB6D0N03BJ3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : CA00J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB6D0N03BJ3
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=25A
VGS=4.5V, ID=15A
30V
12A
44A
6.4mΩ
10.4mΩ
Equivalent Circuit
MTB6D0N03BJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB6D0N03BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB6D0N03BJ3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : CA00J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
10
0.1
f=1MHz
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDS(ON)
100 Limited
10
1 TC=25°C, Tj=150°C
VGS=10V,RθJC=3.8°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
1s
DC
100
8
6
4
2 VDS=15V
ID=14A
0
0 4 8 12 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10 VGS=10V, RθJC=3.8°C/W
5
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTB6D0N03BJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB6D0N03BJ3.PDF ] | |
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